US 9,812,584 B2
Semiconductor device
Shunpei Yamazaki, Setagaya (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken (JP)
Filed on Feb. 27, 2017, as Appl. No. 15/443,075.
Application 15/443,075 is a continuation of application No. 14/543,273, filed on Nov. 17, 2014, granted, now 9,590,112.
Application 14/543,273 is a continuation of application No. 13/154,473, filed on Jun. 7, 2011, granted, now 8,916,865, issued on Dec. 23, 2014.
Claims priority of application No. 2010-138950 (JP), filed on Jun. 18, 2010.
Prior Publication US 2017/0170327 A1, Jun. 15, 2017
Int. Cl. H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01)
CPC H01L 29/7869 (2013.01) [H01L 29/42384 (2013.01); H01L 29/4908 (2013.01); H01L 29/78648 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first gate electrode;
an oxide semiconductor film over the first gate electrode;
a source electrode and a drain electrode in contact with the oxide semiconductor film;
a second gate electrode over the oxide semiconductor film;
a first metal oxide film and a first oxide film between the first gate electrode and the oxide semiconductor film; and
a second metal oxide film and a second oxide film between the oxide semiconductor film and the second gate electrode,
wherein the first oxide film and the second oxide film are in contact with each other outside the oxide semiconductor film in a channel length direction and a channel width direction.