US 9,812,581 B2
Semiconductor device and method for manufacturing same
Hidehito Kitakado, Osaka (JP)
Assigned to Sharp Kabushiki Kaisha, Sakai (JP)
Appl. No. 14/772,791
Filed by Sharp Kabushiki Kaisha, Osaka-shi, Osaka (JP)
PCT Filed Feb. 25, 2014, PCT No. PCT/JP2014/054476
§ 371(c)(1), (2) Date Sep. 4, 2015,
PCT Pub. No. WO2014/136612, PCT Pub. Date Sep. 12, 2014.
Claims priority of application No. 2013-045059 (JP), filed on Mar. 7, 2013.
Prior Publication US 2016/0013325 A1, Jan. 14, 2016
Int. Cl. H01L 29/786 (2006.01); G02F 1/1362 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/78633 (2013.01) [G02F 1/1362 (2013.01); H01L 29/45 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78618 (2013.01); H01L 29/78693 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device comprising a substrate, and an oxide semiconductor layer and a conductor layer supported on the substrate,
the oxide semiconductor layer containing a first metallic element,
the conductor layer having a multilayer structure including
a first metal oxide layer containing the first metallic element,
a second metal oxide layer on the first metal oxide layer, the second metal oxide layer containing an oxide of a second metallic element, and
a metal layer on the second metal oxide layer, the metal layer containing the second metallic element, wherein,
the first metal oxide layer and the oxide semiconductor layer are made of a same oxide film;
when viewed from a normal direction of the substrate, the first metal oxide layer and the oxide semiconductor layer do not overlap each other;
the same oxide film is an oxide semiconductor film containing the first metallic element:
the first metal oxide layer is a layer having been made electrically conductive as a result of the oxide semiconductor film reacting with the metal layer; and
the second metal oxide layer is a layer resulting from a portion of the metal layer reacting with the oxide semiconductor film.