| US 9,812,579 B2 | ||
| Thin film transistor, method of fabricating the same, array substrate and display device | ||
| Jincheng Gao, Beijing (CN); Bin Zhang, Beijing (CN); Xiaolong He, Beijing (CN); Xiangchun Kong, Beijing (CN); Qi Yao, Beijing (CN); Zhanfeng Cao, Beijing (CN); and Zhengliang Li, Beijing (CN) | ||
| Assigned to BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN) | ||
| Filed by BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN) | ||
| Filed on May 9, 2016, as Appl. No. 15/149,587. | ||
| Claims priority of application No. 2015 1 0236089 (CN), filed on May 11, 2015. | ||
| Prior Publication US 2016/0336458 A1, Nov. 17, 2016 | ||
| Int. Cl. H01L 29/786 (2006.01); H01L 29/45 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01) | ||
| CPC H01L 29/78606 (2013.01) [H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 29/45 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78618 (2013.01); H01L 29/78693 (2013.01); H01L 29/78696 (2013.01)] | 9 Claims |
| 1. A method of fabricating a thin film transistor, comprising:
forming a semiconductor layer;
forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective
layer;
forming a source electrode and a drain electrode on the protective layer; and
removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the
semiconductor layer between the source electrode and the drain electrode,
wherein the conductive film is an amorphous carbon film.
|