US 9,812,579 B2
Thin film transistor, method of fabricating the same, array substrate and display device
Jincheng Gao, Beijing (CN); Bin Zhang, Beijing (CN); Xiaolong He, Beijing (CN); Xiangchun Kong, Beijing (CN); Qi Yao, Beijing (CN); Zhanfeng Cao, Beijing (CN); and Zhengliang Li, Beijing (CN)
Assigned to BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Filed by BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Filed on May 9, 2016, as Appl. No. 15/149,587.
Claims priority of application No. 2015 1 0236089 (CN), filed on May 11, 2015.
Prior Publication US 2016/0336458 A1, Nov. 17, 2016
Int. Cl. H01L 29/786 (2006.01); H01L 29/45 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/78606 (2013.01) [H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 29/45 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78618 (2013.01); H01L 29/78693 (2013.01); H01L 29/78696 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A method of fabricating a thin film transistor, comprising:
forming a semiconductor layer;
forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer;
forming a source electrode and a drain electrode on the protective layer; and
removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode,
wherein the conductive film is an amorphous carbon film.