US 9,812,575 B1
Contact formation for stacked FinFETs
Alexander Reznicek, Troy, NY (US); Pouya Hashemi, White Plains, NY (US); Kangguo Cheng, Schenectady, NY (US); and Dominic J. Schepis, Wappingers Falls, NY (US)
Assigned to GLOBALFOUNDRIES INC., Grand Cayman (KY)
Filed by GLOBALFOUNDRIES INC., Grand Cayman (KY)
Filed on Sep. 15, 2016, as Appl. No. 15/266,092.
Int. Cl. H01L 29/78 (2006.01); H01L 29/165 (2006.01); H01L 23/528 (2006.01); H01L 29/66 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 27/092 (2006.01)
CPC H01L 29/785 (2013.01) [H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01L 23/5283 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/165 (2013.01); H01L 29/66795 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
a fin stack disposed on a substrate, the fin stack comprising a first semiconductor fin, a dielectric fin atop the first semiconductor fin, and a second semiconductor fin atop the dielectric fin; and
a template semiconductor layer disposed beneath the fin stack, wherein the template semiconductor layer extends laterally in a direction orthogonal to a lengthwise direction of the stacked semiconductor fins 1 to 20 times a fin-to-fin repeat distance, and a composition of the template semiconductor layer is different than a composition of the first semiconductor fin.