US 9,812,574 B2
Techniques and configurations for stacking transistors of an integrated circuit device
Ravi Pillarisetty, Potland, OR (US); Charles C. Kuo, Hillsboro, OR (US); Han Wui Then, Portland, OR (US); Gilbert Dewey, Hillsboro, OR (US); Willy Rachmady, Beaverton, OR (US); Van H. Le, Portland, OR (US); Marko Radosavljevic, Beaverton, OR (US); Jack T. Kavalieros, Portland, OR (US); and Niloy Mukherjee, Beaverton, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by INTEL CORPORATION, Santa Clara, CA (US)
Filed on Nov. 11, 2015, as Appl. No. 14/938,739.
Application 14/938,739 is a division of application No. 13/997,972, granted, now 9,236,476, previously published as PCT/US2011/067663, filed on Dec. 28, 2011.
Prior Publication US 2016/0064545 A1, Mar. 3, 2016
Int. Cl. H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 21/84 (2006.01); H01L 29/423 (2006.01); H01L 27/12 (2006.01); G11C 11/412 (2006.01); H01L 29/66 (2006.01); H01L 27/06 (2006.01)
CPC H01L 29/785 (2013.01) [G11C 11/412 (2013.01); H01L 21/845 (2013.01); H01L 27/1211 (2013.01); H01L 29/4232 (2013.01); H01L 29/42392 (2013.01); H01L 29/66795 (2013.01); H01L 29/78696 (2013.01); H01L 27/0688 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method, comprising:
providing a semiconductor substrate;
depositing a first isolation layer on the semiconductor substrate, a first channel layer on the first isolation layer, a second isolation layer on the first channel layer, and a second channel layer on the second isolation layer to form a stack of layers;
patterning the stack of layers to form one or more fin structures, the one or more fin structures including the first isolation layer, the first channel layer, the second isolation layer, and the second channel layer; and
removing a portion of the second isolation layer and a portion of the second channel layer within an individual fin structure of the one or more fin structures to form a one-channel region of the individual fin structure, wherein the stack of layers within the one-channel region of the individual fin structure only includes the first channel layer and the first isolation layer and the stack of layers within a two-channel region of the individual fin structure includes both the first channel layer and the second channel layer.