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US 9,812,572 B2 |
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Reacted conductive gate electrodes and methods of making the same |
Matthew T. Currie, Brookline, MA (US); and Richard Hammond, Staffordshire (GB) |
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW) |
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW) |
Filed on Apr. 25, 2016, as Appl. No. 15/137,517. |
Application 14/320,065 is a division of application No. 13/342,589, filed on Jan. 3, 2012, granted, now 8,785,315, issued on Jul. 22, 2014. |
Application 15/137,517 is a continuation of application No. 14/697,337, filed on Apr. 27, 2015, granted, now 9,343,539. |
Application 14/697,337 is a continuation of application No. 14/320,065, filed on Jun. 30, 2014, granted, now 9,048,167, issued on Jun. 2, 2015. |
Application 13/342,589 is a continuation of application No. 10/944,618, filed on Sep. 17, 2004, granted, now 8,129,821, issued on Mar. 6, 2012. |
Application 10/944,618 is a continuation of application No. 10/179,079, filed on Jun. 25, 2002, granted, now 6,982,474, issued on Jan. 3, 2006. |
Prior Publication US 2016/0240676 A1, Aug. 18, 2016 |
Int. Cl. H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/165 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 21/324 (2006.01); H01L 29/08 (2006.01); H01L 29/161 (2006.01)
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