US 9,812,572 B2
Reacted conductive gate electrodes and methods of making the same
Matthew T. Currie, Brookline, MA (US); and Richard Hammond, Staffordshire (GB)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Apr. 25, 2016, as Appl. No. 15/137,517.
Application 14/320,065 is a division of application No. 13/342,589, filed on Jan. 3, 2012, granted, now 8,785,315, issued on Jul. 22, 2014.
Application 15/137,517 is a continuation of application No. 14/697,337, filed on Apr. 27, 2015, granted, now 9,343,539.
Application 14/697,337 is a continuation of application No. 14/320,065, filed on Jun. 30, 2014, granted, now 9,048,167, issued on Jun. 2, 2015.
Application 13/342,589 is a continuation of application No. 10/944,618, filed on Sep. 17, 2004, granted, now 8,129,821, issued on Mar. 6, 2012.
Application 10/944,618 is a continuation of application No. 10/179,079, filed on Jun. 25, 2002, granted, now 6,982,474, issued on Jan. 3, 2006.
Prior Publication US 2016/0240676 A1, Aug. 18, 2016
Int. Cl. H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/165 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 21/324 (2006.01); H01L 29/08 (2006.01); H01L 29/161 (2006.01)
CPC H01L 29/7848 (2013.01) [H01L 21/2807 (2013.01); H01L 21/28052 (2013.01); H01L 21/28255 (2013.01); H01L 21/28518 (2013.01); H01L 21/324 (2013.01); H01L 29/0847 (2013.01); H01L 29/1054 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/45 (2013.01); H01L 29/49 (2013.01); H01L 29/665 (2013.01); H01L 29/7842 (2013.01); H01L 29/6659 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a substrate comprising a strained layer over a relaxed layer; and
a gate stack over the substrate, the gate stack comprising a gate electrode over a dielectric layer, the gate electrode comprising a first portion comprising a first material and a second portion comprising the first material, a second material, and a metal reacted with the first material and the second material, the first portion being disposed between the second portion and the dielectric layer, a composition of the first material between the first portion and the second portion being graded.