US 9,812,571 B2
Tensile strained high percentage silicon germanium alloy FinFETs
Bruce B. Doris, Slingerlands, NY (US); Pouya Hashemi, White Plains, NY (US); Alexander Reznicek, Troy, NY (US); Joshua M. Rubin, Albany, NY (US); and Robin M. Schulz, Albany, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Sep. 30, 2015, as Appl. No. 14/871,042.
Prior Publication US 2017/0092765 A1, Mar. 30, 2017
Int. Cl. H01L 21/20 (2006.01); H01L 21/22 (2006.01); H01L 21/324 (2006.01); H01L 21/336 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 29/165 (2006.01); H01L 29/06 (2006.01); H01L 29/161 (2006.01)
CPC H01L 29/7848 (2013.01) [H01L 21/0245 (2013.01); H01L 21/02318 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02664 (2013.01); H01L 21/324 (2013.01); H01L 21/823418 (2013.01); H01L 29/165 (2013.01); H01L 29/41791 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01); H01L 21/0262 (2013.01); H01L 29/7853 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor structure, said method comprising:
forming a gate structure straddling over a portion of a silicon germanium alloy fin having a first germanium content;
forming a non-doped epitaxial silicon source material on a first side of said gate structure and a non-doped epitaxial silicon drain material on a second side of said gate structure, said second side is opposite said first side, wherein said non-doped epitaxial silicon source material is spaced apart from said non-doped epitaxial silicon drain material by an entirety of said gate structure;
forming a dielectric liner material on said non-doped epitaxial silicon source and drain materials and surrounding and in direct contact with physically exposed surfaces of said gate structure prior to performing a thermal mixing process;
performing said thermal mixing process, wherein said thermal mixing process converts a portion of said silicon germanium alloy fin and said non-doped epitaxial silicon source material into a silicon germanium alloy source structure having a second germanium content that is less than said first germanium content, converts another portion of said silicon germanium alloy fin and said non-doped epitaxial silicon drain material into a silicon germanium alloy drain structure having said second germanium content, and provides a tensile strained silicon germanium alloy fin portion having said first germanium content; and
introducing a dopant into said silicon germanium alloy source structure and into said silicon germanium alloy drain structure.