US 9,812,571 B2 | ||
Tensile strained high percentage silicon germanium alloy FinFETs | ||
Bruce B. Doris, Slingerlands, NY (US); Pouya Hashemi, White Plains, NY (US); Alexander Reznicek, Troy, NY (US); Joshua M. Rubin, Albany, NY (US); and Robin M. Schulz, Albany, NY (US) | ||
Assigned to International Business Machines Corporation, Armonk, NY (US) | ||
Filed by International Business Machines Corporation, Armonk, NY (US) | ||
Filed on Sep. 30, 2015, as Appl. No. 14/871,042. | ||
Prior Publication US 2017/0092765 A1, Mar. 30, 2017 | ||
Int. Cl. H01L 21/20 (2006.01); H01L 21/22 (2006.01); H01L 21/324 (2006.01); H01L 21/336 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 29/165 (2006.01); H01L 29/06 (2006.01); H01L 29/161 (2006.01) |
CPC H01L 29/7848 (2013.01) [H01L 21/0245 (2013.01); H01L 21/02318 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02664 (2013.01); H01L 21/324 (2013.01); H01L 21/823418 (2013.01); H01L 29/165 (2013.01); H01L 29/41791 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01); H01L 21/0262 (2013.01); H01L 29/7853 (2013.01)] | 13 Claims |
1. A method of forming a semiconductor structure, said method comprising:
forming a gate structure straddling over a portion of a silicon germanium alloy fin having a first germanium content;
forming a non-doped epitaxial silicon source material on a first side of said gate structure and a non-doped epitaxial silicon
drain material on a second side of said gate structure, said second side is opposite said first side, wherein said non-doped
epitaxial silicon source material is spaced apart from said non-doped epitaxial silicon drain material by an entirety of said
gate structure;
forming a dielectric liner material on said non-doped epitaxial silicon source and drain materials and surrounding and in
direct contact with physically exposed surfaces of said gate structure prior to performing a thermal mixing process;
performing said thermal mixing process, wherein said thermal mixing process converts a portion of said silicon germanium alloy
fin and said non-doped epitaxial silicon source material into a silicon germanium alloy source structure having a second germanium
content that is less than said first germanium content, converts another portion of said silicon germanium alloy fin and said
non-doped epitaxial silicon drain material into a silicon germanium alloy drain structure having said second germanium content,
and provides a tensile strained silicon germanium alloy fin portion having said first germanium content; and
introducing a dopant into said silicon germanium alloy source structure and into said silicon germanium alloy drain structure.
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