US 9,812,570 B2
Semiconductor device and manufacturing method thereof
Chih-Fen Chen, Hsinchu (TW); Chui-Ya Peng, Hsinchu (TW); Ching Yu, Hsinchu (TW); Pin-Hen Lin, New Taipei (TW); Yen Chuang, Taipei (TW); and Yuh-Ta Fan, Shin Chu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Jun. 30, 2015, as Appl. No. 14/788,522.
Prior Publication US 2017/0005196 A1, Jan. 5, 2017
Int. Cl. H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/336 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01)
CPC H01L 29/7848 (2013.01) [H01L 29/0847 (2013.01); H01L 29/6659 (2013.01); H01L 29/66636 (2013.01); H01L 29/7834 (2013.01); H01L 29/165 (2013.01); H01L 29/665 (2013.01); H01L 29/7835 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate having a plurality of facets defining a recess, the facets having a first facet, a second facet, and a bottom facet, the first facet and the second facet defining a first corner, the second facet and the bottom facet defining a second corner, the first corner being in a position higher than the second corner;
a liner disposed in the recess, the liner defining a round corner pointing toward the first corner, wherein a radius of curvature of the round corner is about 20 nm to about 60 nm; and
an epitaxy structure disposed in the recess, wherein the liner is disposed between the epitaxy structure and the substrate.