US 9,812,569 B2
Semiconductor device and fabricating method thereof
I-Chih Chen, Tainan (TW); Ying-Lang Wang, Taichung (TW); Chih-Mu Huang, Tainan (TW); Ying-Hao Chen, Tainan (TW); Wen-Chang Kuo, Tainan (TW); and Jung-Chi Jeng, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Mar. 25, 2014, as Appl. No. 14/224,961.
Claims priority of provisional application 61/927,847, filed on Jan. 15, 2014.
Prior Publication US 2015/0200299 A1, Jul. 16, 2015
Int. Cl. H01L 29/78 (2006.01); H01L 29/167 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/165 (2006.01)
CPC H01L 29/7848 (2013.01) [H01L 29/0847 (2013.01); H01L 29/167 (2013.01); H01L 29/66628 (2013.01); H01L 29/66636 (2013.01); H01L 29/165 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate having a top surface;
a gate structure disposed on the top surface of the substrate, wherein the gate structure includes spacers flanking from both sides;
a pair of source/drain regions disposed respectively next to the spacers in the substrate and each having a first dopant, wherein a channel region is defined between the source/drain regions, and wherein the first dopant is boron, phosphorous or arsenic, and a dosage of the first dopant is in a range from about 1×1020 cm−3 to about 9×1020 cm−3;
a pair of diamond-shaped epitaxial barrier layers each having SiGe and a second dopant in the substrate, wherein each of the epitaxial barrier layers is formed around one of the source/drain regions, each of the epitaxial barrier layers comprising:
a bottom facet;
a pair of lower sidewall facets extending outwardly from the bottom facet; and
a pair of upper sidewall facets extending inwardly from the pair of the lower sidewall facets,
wherein an innermost one of the upper sidewall facets, an adjacent one of the spacers and the corresponding source/drain region form a vertex at the top surface, the second dopant is carbon or nitrogen, and a carbon concentration of the epitaxial barrier layer is in a range from about 1011 cm−3 to about 1014 cm−3 and a nitrogen concentration of the epitaxial barrier layer is in a range from about 1015 cm−3 to about 1019 cm−3; and
a pair of contact layers each having a third dopant, wherein the contact layers are disposed on top portions of the source/drain regions, respectively, wherein the third dopant is boron or phosphorous or arsenic.