US 9,812,568 B2
Ionic barristor
Kyeongjae Cho, Frisco, TX (US); Yifan Nie, Dallas, TX (US); Suklyun Hong, Plano, TX (US); and Robert M. Wallace, Garland, TX (US)
Assigned to BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM, Austin, TX (US)
Filed by BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM, Austin, TX (US)
Filed on Feb. 4, 2016, as Appl. No. 15/15,875.
Prior Publication US 2017/0229576 A1, Aug. 10, 2017
Int. Cl. H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 29/45 (2006.01); H01L 29/165 (2006.01); H01L 29/16 (2006.01); H03K 17/687 (2006.01)
CPC H01L 29/7839 (2013.01) [H01L 29/165 (2013.01); H01L 29/1606 (2013.01); H01L 29/45 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01); H03K 17/687 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a transition-metal dichalcogenide (TMD) layer;
a graphene layer on the TMD layer and extending over an isolation layer laterally adjacent to the TMD layer;
an electrolyte layer on the graphene layer; and
a source gate contact on the electrolyte layer.