US 9,812,557 B2
Method of manufacturing semiconductor device
Hyun-Kwan Yu, Suwon-si (KR); Dong-Suk Shin, Yongin-si (KR); Woon-Ki Shin, Seoul (KR); Cheol-Woo Park, Hwaseong-si (KR); Ryong Ha, Seoul (KR); and Han-Jin Lim, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do (KR)
Filed on Apr. 26, 2016, as Appl. No. 15/138,234.
Claims priority of application No. 10-2015-0091019 (KR), filed on Jun. 26, 2015.
Prior Publication US 2016/0380082 A1, Dec. 29, 2016
Int. Cl. H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/66795 (2013.01) [H01L 21/02068 (2013.01); H01L 21/32134 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
forming an active fin extending longitudinally along a surface of a substrate in a first direction;
forming a field insulating layer on the substrate, the field insulating layer covering a part of the active fin;
forming a dummy gate structure comprising a dummy gate electrode on the field insulating layer and the active fin, the dummy gate electrode extending longitudinally in a second direction different from the first direction;
forming a spacer on sides of the dummy gate electrode;
removing the dummy gate electrode by performing a wet etching process including:
a primary etch process of etching away a first thickness of the dummy gate electrode using an etchant,
rinsing the dummy gate electrode using a rinse solution after the primary etching process,
a secondary etch process of etching away a second thickness of the dummy gate electrode using an etchant after the rinsing, and
deriving a value representative of at least one thickness of the spacer as taken in the first direction, and wherein the first thickness is substantially equal to 1 to 6.5 times said value,
wherein a composition of the rinse solution is different from that of the etchant used in each of the primary and secondary etch processes such that the rinsing of the dummy gate electrode is a process discrete from each of the primary etch process and the secondary etch process.