US 9,812,556 B2
Semiconductor device and method of manufacturing the semiconductor device
Shogo Mochizuki, Kawasaki (JP); Gen Tsutsui, Kawasaki (JP); Raghavasimhan Sreenivasan, Armonk, NY (US); Pranita Kerber, Armonk, NY (US); Qiqing C. Ouyang, Armonk, NY (US); and Alexander Reznicek, Armonk, NY (US)
Assigned to Renesas Electronics Corporation, Kawasaki-shi, Kanagawa (JP); and International Business Machines Corporation, Armonk, NY (US)
Filed by Renesas Electronics Corporation, Kawasaki-shi (JP); and International Business Machines Corporation, Armonk, NY (US)
Filed on Dec. 27, 2013, as Appl. No. 14/142,410.
Claims priority of provisional application 61/747,121, filed on Dec. 28, 2012.
Prior Publication US 2014/0183605 A1, Jul. 3, 2014
Int. Cl. H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/66795 (2013.01) [H01L 29/785 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
forming a plurality of fin structures on a substrate, the plurality of fin structures including a diffusion region;
forming an epitaxial layer on the plurality of fin structures in an area of the diffusion region such that a cross-section of the epitaxial layer includes a diamond-shaped facet comprising a {111} crystal orientation on the plurality of fin structures;
growing the diamond-shaped facet of the epitaxial layer such that a height of the upper surface of the epitaxial layer over plurality of fin structures is substantially equal to the height of the upper surface of the epitaxial layer between the plurality of fin structures; and
planarizing the upper surface of the epitaxial layer by etch back.