| US 9,812,556 B2 | ||
| Semiconductor device and method of manufacturing the semiconductor device | ||
| Shogo Mochizuki, Kawasaki (JP); Gen Tsutsui, Kawasaki (JP); Raghavasimhan Sreenivasan, Armonk, NY (US); Pranita Kerber, Armonk, NY (US); Qiqing C. Ouyang, Armonk, NY (US); and Alexander Reznicek, Armonk, NY (US) | ||
| Assigned to Renesas Electronics Corporation, Kawasaki-shi, Kanagawa (JP); and International Business Machines Corporation, Armonk, NY (US) | ||
| Filed by Renesas Electronics Corporation, Kawasaki-shi (JP); and International Business Machines Corporation, Armonk, NY (US) | ||
| Filed on Dec. 27, 2013, as Appl. No. 14/142,410. | ||
| Claims priority of provisional application 61/747,121, filed on Dec. 28, 2012. | ||
| Prior Publication US 2014/0183605 A1, Jul. 3, 2014 | ||
| Int. Cl. H01L 29/66 (2006.01); H01L 29/78 (2006.01) | ||
| CPC H01L 29/66795 (2013.01) [H01L 29/785 (2013.01)] | 16 Claims |
| 1. A method of manufacturing a semiconductor device, comprising:
forming a plurality of fin structures on a substrate, the plurality of fin structures including a diffusion region;
forming an epitaxial layer on the plurality of fin structures in an area of the diffusion region such that a cross-section
of the epitaxial layer includes a diamond-shaped facet comprising a {111} crystal orientation on the plurality of fin structures;
growing the diamond-shaped facet of the epitaxial layer such that a height of the upper surface of the epitaxial layer over
plurality of fin structures is substantially equal to the height of the upper surface of the epitaxial layer between the plurality
of fin structures; and
planarizing the upper surface of the epitaxial layer by etch back.
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