US 9,812,549 B2
Formation method of semiconductor device structure
Che-Cheng Chang, New Taipei (TW); Chih-Han Lin, Hsinchu (TW); Chen-Hsiang Lu, Hsinchu (TW); Wei-Ting Chen, Hsinchu (TW); and Yu-Cheng Liu, Hsinchu County (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd, Hsinchu (TW)
Filed on Sep. 6, 2016, as Appl. No. 15/257,567.
Application 15/257,567 is a division of application No. 14/743,768, filed on Jun. 18, 2015, granted, now 9,450,099.
Prior Publication US 2016/0372566 A1, Dec. 22, 2016
Int. Cl. H01L 21/3205 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 21/311 (2006.01); H01L 23/522 (2006.01); H01L 29/51 (2006.01)
CPC H01L 29/6653 (2013.01) [H01L 21/28008 (2013.01); H01L 21/28247 (2013.01); H01L 21/31116 (2013.01); H01L 23/5226 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 29/517 (2013.01); H01L 29/7848 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor device structure, comprising:
forming a dummy gate stack over a semiconductor substrate;
forming spacer elements over sidewalls of the dummy gate stack;
removing the dummy gate stack to form a recess between the spacer elements;
partially removing the spacer elements such that an upper portion of the recess becomes wider;
forming a metal gate stack in the recess;
forming a protection element over the metal gate stack to fill the recess; and
forming a conductive contact to electrically connect to a conductive feature over the semiconductor substrate such that the conductive contact is in direct contact with the spacer element.