| US 9,812,545 B2 | ||
| Electronic device for data storage and a method of producing an electronic device for data storage | ||
| A. L. Roy Vellaisamy, Kowloon (HK); Ye Zhou, Kowloon (HK); and Su-Ting Han, Kowloon (HK) | ||
| Assigned to City University of Hong Kong, Hong Kong (HK) | ||
| Filed by City University of Hong Kong, Kowloon (HK) | ||
| Filed on Oct. 30, 2014, as Appl. No. 14/528,044. | ||
| Prior Publication US 2016/0126329 A1, May 5, 2016 | ||
| Int. Cl. H01L 29/06 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01) | ||
| CPC H01L 29/495 (2013.01) [H01L 21/28273 (2013.01); H01L 29/0673 (2013.01); H01L 29/42324 (2013.01)] | 9 Claims |
| 1. A method of producing an electronic device for data storage comprising the steps of:
producing a plurality of metal nanoparticles, wherein the plurality of metal nanoparticles each include a metal core and a
metal shell, said step of producing a plurality of metal nanoparticles including the steps of:
producing the metal cores of the metal nanoparticles; and
producing the metal shells arranged to encapsulate the metal cores of the metal nanoparticles; and
depositing a memory storage element on a substrate of the electronic device; wherein the memory storage element includes the
plurality of metal nanoparticles; wherein the memory storage element is arranged to represent two or more memory states of
the electronic device; and wherein the step of depositing the memory storage element on the substrate of the electronic device
comprises the steps of:
producing a monolayer of the plurality of metal nanoparticles; and thereafter
transferring the produced monolayer the substrate.
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