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US 9,812,542 B2 |
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Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions |
Daniel E. Grupp, Palo Alto, CA (US); and Daniel J. Connelly, Redwood City, CA (US) |
Assigned to Acorn Technologies, Inc., La Jolla, CA (US) |
Filed by Acorn Technologies, Inc., La Jolla, CA (US) |
Filed on Aug. 30, 2016, as Appl. No. 15/251,210. |
Application 13/022,522 is a division of application No. 12/197,996, filed on Aug. 25, 2008, granted, now 7,884,003, issued on Feb. 8, 2011. |
Application 12/197,996 is a division of application No. 11/181,217, filed on Jul. 13, 2005, granted, now 7,462,860, issued on Dec. 9, 2008. |
Application 15/251,210 is a continuation of application No. 15/048,877, filed on Feb. 19, 2016. |
Application 15/048,877 is a continuation of application No. 13/552,556, filed on Jul. 18, 2012, granted, now 9,425,277, issued on Aug. 23, 2016. |
Application 13/552,556 is a continuation of application No. 13/022,522, filed on Feb. 7, 2011, granted, now 8,431,469, issued on Apr. 30, 2013. |
Application 11/181,217 is a continuation of application No. 10/217,758, filed on Aug. 12, 2002, granted, now 7,084,423, issued on Aug. 1, 2006. |
Prior Publication US 2016/0372564 A1, Dec. 22, 2016 |
Int. Cl. H01L 29/45 (2006.01); H01L 29/78 (2006.01); H01L 21/285 (2006.01); H01L 29/08 (2006.01); H01L 29/47 (2006.01); H01L 29/66 (2006.01); H01L 29/812 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/872 (2006.01); H01L 29/80 (2006.01)
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