US 9,812,534 B2
Semiconductor device and method of manufacturing the same
Naiqian Zhang, Kunshan (CN); and Fengli Pei, Kunshan (CN)
Assigned to DYNAX SEMICONDUCTOR, INC., Kunshan, Jiangsu Province (CN)
Filed by Dynax Semiconductor, Inc., Kunshan (CN)
Filed on Feb. 9, 2015, as Appl. No. 14/616,985.
Application 14/616,985 is a continuation in part of application No. PCT/CN2014/083848, filed on Aug. 7, 2014.
Prior Publication US 2016/0043184 A1, Feb. 11, 2016
Int. Cl. H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/812 (2006.01); H01L 29/20 (2006.01); H01L 29/16 (2006.01)
CPC H01L 29/402 (2013.01) [H01L 29/66068 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/812 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01)] 18 Claims
OG exemplary drawing
1. A semiconductor device, comprising:
a substrate;
a semiconductor layer disposed on the substrate;
a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode disposed between the source electrode and the drain electrode;
a dielectric layer disposed on at least a part of the surface of the semiconductor layer which is between the gate electrode and the drain electrode, the dielectric layer having at least a recess therein; and
a source field plate disposed on the dielectric layer and at least partially covering the recess, the source field plate being electrically connected to the source electrode through at least a conductive path,
wherein the dielectric layer comprises a first dielectric layer and a second dielectric layer disposed on the first dielectric layer, and a bottom surface of the recess directly contacts an upper surface of the first dielectric layer.