US 9,812,533 B2
Method for manufacturing semiconductor device
Shunpei Yamazaki, Tokyo (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken (JP)
Filed on Jan. 14, 2013, as Appl. No. 13/740,313.
Application 13/740,313 is a continuation of application No. 13/091,210, filed on Apr. 21, 2011, granted, now 8,461,007.
Claims priority of application No. 2010-100197 (JP), filed on Apr. 23, 2010.
Prior Publication US 2013/0126862 A1, May 23, 2013
Int. Cl. H01L 29/10 (2006.01); H01L 29/26 (2006.01); H01L 21/383 (2006.01); H01L 21/477 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01)
CPC H01L 29/263 (2013.01) [H01L 21/383 (2013.01); H01L 21/477 (2013.01); H01L 29/4908 (2013.01); H01L 29/66969 (2013.01); H01L 29/78 (2013.01); H01L 29/7869 (2013.01); H01L 29/78603 (2013.01); H01L 27/1225 (2013.01)] 30 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an oxide semiconductor layer comprising a channel formation region, the oxide semiconductor layer comprising oxygen and metal elements, the metal elements including indium;
a metal oxide layer over and in contact with the oxide semiconductor layer;
an insulating layer comprising silicon and oxygen over the metal oxide layer; and
a gate electrode adjacent to the oxide semiconductor layer,
wherein the metal oxide layer comprises oxygen and same metal elements as the metal elements of the oxide semiconductor layer, and
wherein the metal oxide layer reduces an amount of oxygen vacancy which is associated with a bond between indium and oxygen.