US 9,812,532 B1
III-nitride P-channel transistor
Rongming Chu, Agoura Hills, CA (US); Yu Cao, Agoura Hills, CA (US); Mary Y. Chen, Oak Park, CA (US); and Zijian “Ray” Li, Thousand Oaks, CA (US)
Assigned to HRL Laboratories, LLC, Malibu, CA (US)
Filed by HRL Laboratories, LLC, Malibu, CA (US)
Filed on Aug. 28, 2015, as Appl. No. 14/838,958.
Int. Cl. H01L 29/15 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/207 (2006.01)
CPC H01L 29/2003 (2013.01) [H01L 29/207 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A field effect transistor (FET) comprising:
a group III-Nitride channel layer;
a group III-Nitride doped cap layer on the channel layer, wherein the cap layer consists of a single layer comprising doping to provide mobile holes;
a source electrode in direct contact with the group III-Nitride cap layer;
a drain electrode in direct contact with the group III-Nitride cap layer;
a gate electrode located between the source and the drain electrodes; and
a gate dielectric layer between the gate electrode and the group III-Nitride channel layer;
wherein the FET is a normally off FET.