US 9,812,530 B2
High germanium content silicon germanium fins
Karthik Balakrishnan, New York, NY (US); John Bruley, Poughkeepsie, NY (US); Pouya Hashemi, White Plains, NY (US); Ali Khakifirooz, Los Altos, CA (US); John A. Ott, Greenwood Lake, NY (US); and Alexander Reznicek, Troy, NY (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Mar. 13, 2016, as Appl. No. 15/68,601.
Application 15/068,601 is a division of application No. 14/479,252, filed on Sep. 5, 2014, granted, now 9,324,843.
Prior Publication US 2016/0197147 A1, Jul. 7, 2016
Int. Cl. H01L 27/12 (2006.01); H01L 29/161 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/306 (2006.01); H01L 21/311 (2006.01); H01L 21/324 (2006.01); H01L 29/06 (2006.01); H01L 21/18 (2006.01); H01L 27/088 (2006.01); H01L 29/10 (2006.01)
CPC H01L 29/161 (2013.01) [H01L 21/18 (2013.01); H01L 21/30604 (2013.01); H01L 21/31144 (2013.01); H01L 21/324 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/0657 (2013.01); H01L 29/1054 (2013.01); H01L 29/66818 (2013.01); H01L 29/785 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A finned structure comprising:
a semiconductor substrate layer;
a continuous electrically insulating layer on the substrate layer, the electrically insulating layer including a bottom surface adjoining the substrate layer and a top surface, and
a plurality of parallel germanium-containing fins on the top surface of the electrically insulating layer, the electrically insulating layer being positioned between the substrate layer and the fins and electrically insulating the fins from the substrate layer, the fins having vertical, planar side walls extending vertically from the top surface of the electrically insulating layer and, in their entireties, consisting essentially of Si1-yGey where y is between 0.8-1, each of the fins having a width of eight nanometers or less.