US 9,812,529 B2
Semiconductor device and method for manufacturing the same
Teruyuki Ohashi, Kawasaki (JP); Tatsuo Shimizu, Shinagawa (JP); and Ryosuke Iijima, Setagaya (JP)
Assigned to Kabushiki Kaisha Toshiba, Minato-ku (JP)
Filed by Kabushiki Kaisha Toshiba, Minato-ku (JP)
Filed on Feb. 19, 2016, as Appl. No. 15/48,348.
Claims priority of application No. 2015-033596 (JP), filed on Feb. 24, 2015.
Prior Publication US 2016/0247884 A1, Aug. 25, 2016
Int. Cl. H01L 29/34 (2006.01); H01L 29/16 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/51 (2006.01); H01L 29/167 (2006.01); H01L 21/04 (2006.01); H01L 21/265 (2006.01); H01L 29/739 (2006.01); H01L 21/324 (2006.01)
CPC H01L 29/1608 (2013.01) [H01L 21/045 (2013.01); H01L 21/049 (2013.01); H01L 21/26506 (2013.01); H01L 29/167 (2013.01); H01L 29/34 (2013.01); H01L 29/4916 (2013.01); H01L 29/51 (2013.01); H01L 29/518 (2013.01); H01L 29/66068 (2013.01); H01L 29/7395 (2013.01); H01L 21/324 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a SiC layer;
a gate electrode; and
a gate insulating layer provided between the SiC layer and the gate electrode,
wherein a peak of nitrogen (N) concentration distribution and a peak of fluorine (F) concentration distribution exist substantially at an interface between the SiC layer and the gate insulatinu film.