US 9,812,527 B2
Growth of semiconductors on hetero-substrates using graphene as an interfacial layer
Yong Zhang, Charlotte, NC (US); Raphael Tsu, Huntersville, NC (US); and Naili Yue, Oakland, CA (US)
Assigned to THE UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE, Charlotte, NC (US)
Filed by Yong Zhang, Charlotte, NC (US); Raphael Tsu, Huntersville, NC (US); and Naili Yue, Oakland, CA (US)
Filed on Mar. 20, 2017, as Appl. No. 15/463,804.
Application 15/463,804 is a continuation of application No. 14/786,029, granted, now 9,601,579, previously published as PCT/US2014/039596, filed on May 27, 2014.
Claims priority of provisional application 61/827,047, filed on May 24, 2013.
Prior Publication US 2017/0194437 A1, Jul. 6, 2017
Int. Cl. H01L 21/00 (2006.01); H01L 29/16 (2006.01); H01L 29/165 (2006.01); H01L 21/02 (2006.01)
CPC H01L 29/16 (2013.01) [H01L 21/0259 (2013.01); H01L 21/0262 (2013.01); H01L 21/02444 (2013.01); H01L 21/02631 (2013.01); H01L 21/02658 (2013.01); H01L 29/165 (2013.01); H01L 29/1606 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An electronic device, comprising:
a substrate;
a crystalline graphene layer deposited on the substrate; and
a semiconductor material deposited on the crystalline graphene layer so that epitaxial layers of the semiconductor material grow on the crystalline graphene layer,
wherein the crystalline graphene layer is a graphene layer that has not been intentionally or unintentionally modified to increase the number of defects that function as nucleation sites.