US 9,812,526 B2
Three-dimensional semiconductor devices
Kyung-Jun Shin, Seoul (KR); Byoungil Lee, Seoul (KR); Dongseog Eun, Seongnam-si (KR); Hyunkook Lee, Suwon-si (KR); and Seong Soon Cho, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do (KR)
Filed on Sep. 8, 2016, as Appl. No. 15/260,135.
Claims priority of application No. 10-2015-0145647 (KR), filed on Oct. 19, 2015.
Prior Publication US 2017/0110543 A1, Apr. 20, 2017
Int. Cl. H01L 29/49 (2006.01); H01L 29/10 (2006.01); H01L 27/1157 (2017.01); H01L 27/11582 (2017.01)
CPC H01L 29/1083 (2013.01) [H01L 27/1157 (2013.01); H01L 27/11582 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A three-dimensional (3D) semiconductor device, comprising:
a plurality of gate electrodes stacked on a substrate in a direction normal to a top surface of the substrate;
a channel structure passing through the gate electrodes and connected to the substrate; and
a void disposed in the substrate and positioned below the channel structure.