US 9,812,522 B2
Metal-insulator-metal capacitor fabrication with unitary sputtering process
Praneet Adusumilli, Albany, NY (US); Alexander Reznicek, Troy, NY (US); Oscar Van Der Straten, Guilderland Center, NY (US); and Chih-Chao Yang, Glenmont, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Jun. 24, 2016, as Appl. No. 15/192,133.
Application 15/192,133 is a division of application No. 14/945,390, filed on Nov. 18, 2015, granted, now 9,564,310.
Prior Publication US 2017/0141182 A1, May 18, 2017
Int. Cl. H01L 21/8242 (2006.01); H01L 21/02 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/40 (2013.01) [H01L 21/02183 (2013.01); H01L 21/02266 (2013.01); H01L 28/60 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A metal-insulator-metal (MIM) capacitor, comprising:
a bottom electrode comprising a nitride of a metal;
an insulator disposed on the bottom electrode, the insulator comprising a first layer formed of an oxynitride of the metal, a second layer formed of an oxide of the metal and disposed on the first layer, and a third layer formed of an oxynitride of the metal and disposed on the second layer; and
a top electrode disposed on the insulator and comprising a nitride of the metal;
wherein the bottom electrode comprises a fourth layer comprising a non-oxidized and non-nitridized form of the metal, and a fifth layer comprising a nitride of the metal disposed on the fourth layer, and wherein the bottom electrode is characterized by a progressive change in a ratio of the non-oxidized and non-nitridized form of the metal to the nitride of the metal between the fourth and fifth layers.