| US 9,812,522 B2 | ||
| Metal-insulator-metal capacitor fabrication with unitary sputtering process | ||
| Praneet Adusumilli, Albany, NY (US); Alexander Reznicek, Troy, NY (US); Oscar Van Der Straten, Guilderland Center, NY (US); and Chih-Chao Yang, Glenmont, NY (US) | ||
| Assigned to International Business Machines Corporation, Armonk, NY (US) | ||
| Filed by International Business Machines Corporation, Armonk, NY (US) | ||
| Filed on Jun. 24, 2016, as Appl. No. 15/192,133. | ||
| Application 15/192,133 is a division of application No. 14/945,390, filed on Nov. 18, 2015, granted, now 9,564,310. | ||
| Prior Publication US 2017/0141182 A1, May 18, 2017 | ||
| Int. Cl. H01L 21/8242 (2006.01); H01L 21/02 (2006.01); H01L 49/02 (2006.01) | ||
| CPC H01L 28/40 (2013.01) [H01L 21/02183 (2013.01); H01L 21/02266 (2013.01); H01L 28/60 (2013.01)] | 6 Claims |
| 1. A metal-insulator-metal (MIM) capacitor, comprising:
a bottom electrode comprising a nitride of a metal;
an insulator disposed on the bottom electrode, the insulator comprising a first layer formed of an oxynitride of the metal,
a second layer formed of an oxide of the metal and disposed on the first layer, and a third layer formed of an oxynitride
of the metal and disposed on the second layer; and
a top electrode disposed on the insulator and comprising a nitride of the metal;
wherein the bottom electrode comprises a fourth layer comprising a non-oxidized and non-nitridized form of the metal, and
a fifth layer comprising a nitride of the metal disposed on the fourth layer, and wherein the bottom electrode is characterized
by a progressive change in a ratio of the non-oxidized and non-nitridized form of the metal to the nitride of the metal between
the fourth and fifth layers.
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