US 9,812,508 B2
Hybrid bipolar junction transistor
Ali Afzali-Ardakani, Ossining, NY (US); Bahman Hekmatshoartabari, White Plains, NY (US); Tak H. Ning, Yorktown Heights, NY (US); and Davood Shahrjerdi, White Plains, NY (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Nov. 27, 2016, as Appl. No. 15/361,471.
Application 15/361,471 is a division of application No. 14/827,266, filed on Aug. 14, 2015, granted, now 9,508,777.
Application 14/827,266 is a division of application No. 14/184,384, filed on Feb. 19, 2014, granted, now 9,147,715, issued on Sep. 29, 2015.
Prior Publication US 2017/0077185 A1, Mar. 16, 2017
Int. Cl. H01L 27/28 (2006.01); H01L 27/32 (2006.01); H01L 27/12 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/73 (2006.01); H01L 29/66 (2006.01); H01L 51/05 (2006.01); H01L 51/00 (2006.01)
CPC H01L 27/286 (2013.01) [H01L 27/124 (2013.01); H01L 27/1214 (2013.01); H01L 27/3225 (2013.01); H01L 27/3244 (2013.01); H01L 27/3274 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/1004 (2013.01); H01L 29/66265 (2013.01); H01L 29/7302 (2013.01); H01L 29/7317 (2013.01); H01L 51/0504 (2013.01); H01L 51/0055 (2013.01); H01L 2227/323 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A method comprising
obtaining a bipolar junction transistor including a doped crystalline inorganic semiconductor layer and emitter, base and collector contact structures operatively associated with the crystalline inorganic semiconductor layer, the emitter contact structure configured for transporting charge carriers having a first charge type into the inorganic semiconductor layer and suppressing diffusion of charge carriers having a second charge type opposite from the first charge type from the inorganic semiconductor layer, the emitter contact structure including a first organic semiconductor carrier transport layer for transporting the charge carriers having the first type;
causing diffusion of charge carriers having the first charge type into the inorganic semiconductor layer from the emitter contact structure;
within the emitter contact structure, suppressing diffusion of charge carriers having the second charge type from the inorganic semiconductor layer, and
causing the bipolar junction transistor to provide electrical current to an electronic device.