US 9,812,505 B2
Non-volatile memory device containing oxygen-scavenging material portions and method of making thereof
Yukihiro Sakotsubo, Yokkaichi (JP)
Assigned to SANDISK TECHNOLOGIES LLC, Plano, TX (US)
Filed by SANDISK TECHNOLOGIES LLC
Filed on May 18, 2016, as Appl. No. 15/157,945.
Claims priority of provisional application 62/255,731, filed on Nov. 16, 2015.
Prior Publication US 2017/0141161 A1, May 18, 2017
Int. Cl. H01L 47/00 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01); H01L 23/528 (2006.01)
CPC H01L 27/2481 (2013.01) [H01L 23/528 (2013.01); H01L 27/2436 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/1246 (2013.01); H01L 45/146 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A monolithic three-dimensional memory device, comprising:
a repeating stack of instances of a repetition unit comprising an insulating layer, a oxygen-scavenging material portion, and an electrically conductive word line, wherein the repeating stack is located over a substrate, and the oxygen-scavenging material portion comprises a material having a greater affinity to oxygen than a material of the electrically conductive word line;
at least one non-volatile memory element layer including oxygen-scavenged non-volatile memory element portions and non-scavenged non-volatile memory element portions;
at least one bit line extending along a direction of repetition in the repeating stack; and
at least one non-linear element material layer located between the at least one bit line and the at least one non-volatile memory element layer.