| US 9,812,500 B2 | ||
| Negative differential resistance circuit element | ||
| Gary Gibson, Palo Alto, CA (US); Warren Jackson, San Francisco, CA (US); and R. Stanley Williams, Portola Valley, CA (US) | ||
| Assigned to Hewlett Packard Enterprise Development LP, Houston, TX (US) | ||
| Appl. No. 15/114,010 |
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| Filed by Hewlett Packard Enterprise Development LP, Houston, TX (US) | ||
| PCT Filed Jan. 31, 2014, PCT No. PCT/US2014/014093 § 371(c)(1), (2) Date Jul. 25, 2016, PCT Pub. No. WO2015/116152, PCT Pub. Date Aug. 6, 2015. |
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| Prior Publication US 2016/0351622 A1, Dec. 1, 2016 | ||
| Int. Cl. G11C 13/00 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01); G11C 11/16 (2006.01); G11C 7/04 (2006.01) | ||
| CPC H01L 27/2418 (2013.01) [G11C 7/04 (2013.01); G11C 11/1659 (2013.01); G11C 13/003 (2013.01); G11C 13/0007 (2013.01); G11C 13/0023 (2013.01); H01L 45/00 (2013.01); H01L 45/1286 (2013.01); H01L 45/145 (2013.01); G11C 2213/73 (2013.01); G11C 2213/76 (2013.01)] | 13 Claims |
| 1. A circuit component that exhibits a region of negative differential resistance, comprising:
a first layer of material; and
a second layer of material in contact with the first layer of material, the contact forming a first self-heating interface;
wherein the first self-heating interface is structured such that an electrical current flowing from the first layer of material
to the second layer of material encounters an electrical impedance occurring at the first self-heating interface that is greater
than any electrical impedance occurring in the first and second layers of material, wherein heating occurring at the first
self-heating interface is dominated by Joule heating caused by the electrical impedance occurring at the first self-heating
interface, and wherein the electrical impedance occurring at the first self-heating interface decreases with increasing temperature
to induce the region of negative differential resistance; and
wherein a thermal energy generated by the first self-heating interface is dominated by Schottky emission and the barrier height
at the first self-heating interface is from about 0.1 eV (electron-volts) to about 0.5 eV.
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