US 9,812,499 B1
Memory device incorporating selector element with multiple thresholds
Kimihiro Satoh, Fremont, CA (US); and Hongxin Yang, Newark, CA (US)
Assigned to Avalanche Technology, Inc., Fremont, CA (US)
Filed by Avalanche Technology, Inc., Fremont, CA (US)
Filed on Jul. 27, 2016, as Appl. No. 15/221,505.
Int. Cl. H01L 45/00 (2006.01); H01L 27/24 (2006.01)
CPC H01L 27/24 (2013.01) 15 Claims
OG exemplary drawing
 
1. A memory device comprising a memory cell coupled to two wiring lines at two ends thereof, said memory cell comprising:
a memory element including a magnetic free layer and a magnetic reference layer with a tunnel junction layer interposed therebetween; and
a bi-directional two-terminal selector element coupled to said memory element in series, said bi-directional two-terminal selector element including two selector devices having different threshold voltages coupled in series.