US 9,812,498 B2
Semiconductor device
Jieyun Zhou, Fujisawa Kanagawa (JP); and Shinichiro Shiratake, Yokohama Kanagawa (JP)
Assigned to TOSHIBA MEMORY CORPORATION, Tokyo (JP)
Filed by TOSHIBA MEMORY CORPORATION, Minato-ku, Tokyo (JP)
Filed on Jul. 27, 2016, as Appl. No. 15/220,805.
Claims priority of provisional application 62/294,704, filed on Feb. 12, 2016.
Prior Publication US 2017/0236867 A1, Aug. 17, 2017
Int. Cl. G11C 11/00 (2006.01); H01L 27/22 (2006.01); H01L 43/08 (2006.01); G11C 11/16 (2006.01)
CPC H01L 27/228 (2013.01) [G11C 11/1657 (2013.01); G11C 11/1673 (2013.01); G11C 11/1697 (2013.01); H01L 43/08 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a variable resistance circuit including a first circuit which includes a first resistance element and first and second switch elements each connected in parallel with the first resistance element, and a second circuit which includes a second resistance element and third and fourth switch elements each connected in parallel with the second resistance element, the first circuit being connecting in series with the second circuit,
wherein:
when the first resistance element is short-circuited, and the second resistance element is not short-circuited, one of the first and second switch elements is in an ON state and the other of the first and second switch elements, the third switch element, and the fourth switch element are in an OFF state,
when the second resistance element is short-circuited, and the first resistance element is not short-circuited, one of the third and fourth switch elements is in the ON state and the first switch element, the second switch element, and the other of the third and fourth switch elements are in the OFF state,
when the first and second resistance elements are both short-circuited, the first to fourth switch elements are in the ON state, and
when the first and second resistance elements are not short-circuited, the first to fourth switch elements are in the OFF state.