US 9,812,497 B2
Method for manufacturing magnetic storage device, and magnetic storage device
Akiyoshi Hatada, Yokohama (JP)
Assigned to FUJITSU SEMICONDUCTOR LIMITED, Yokohama (JP)
Filed by Akiyoshi Hatada, Yokohama (JP)
Filed on Mar. 24, 2011, as Appl. No. 13/70,714.
Claims priority of application No. 2010-107187 (JP), filed on May 7, 2010.
Prior Publication US 2011/0272770 A1, Nov. 10, 2011
Int. Cl. H01L 27/22 (2006.01); H01L 43/12 (2006.01)
CPC H01L 27/228 (2013.01) [H01L 43/12 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A method for manufacturing a magnetic storage device comprising:
forming lower conductive film over a substrate;
forming a first insulating film over the lower conductive film;
forming an opening in the first insulating film, the opening reaching the lower conductive film and the lower conductive film being exposed through the opening;
depositing an MTJ multilayer film including a magnetization free layer, a tunnel barrier layer and a magnetization fixed layer over the lower conductive film in the opening and over the first insulating film;
forming, by removing the MTJ multilayer film deposited over the first insulating film, an MTJ device including the MTJ multilayer film which has remained in the opening;
forming, by partially removing the first insulating film, a protection film including the first insulating film around the MTJ device, the protection film protecting a side surface of the MTJ device; and
forming, by partially removing the lower conductive film, a lower electrode including the lower conductive film under the MTJ device and the protection film, an outer periphery of the lower electrode matching an outer periphery of the protection film.