US 9,812,496 B2
Magnetoresistive sensor module and method for manufacturing the same
Stefan Kolb, Unterschleissheim (DE); Klemens Pruegl, Regensburg (DE); and Juergen Zimmer, Neubiberg (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Dec. 27, 2016, as Appl. No. 15/391,111.
Application 15/391,111 is a continuation of application No. 15/215,631, filed on Jul. 21, 2016, granted, now 9,570,676.
Application 15/215,631 is a continuation of application No. 14/972,648, filed on Dec. 17, 2015, granted, now 9,423,472, issued on Aug. 23, 2016.
Application 14/972,648 is a continuation of application No. 11/360,538, filed on Feb. 23, 2006, granted, now 9,231,026, issued on Jan. 15, 2016.
Claims priority of application No. 10 2005 008 368 (DE), filed on Feb. 23, 2005; and application No. 10 2005 047 414 (DE), filed on Oct. 4, 2005.
Prior Publication US 2017/0110505 A1, Apr. 20, 2017
Int. Cl. H01L 43/12 (2006.01); H01L 27/22 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 43/02 (2006.01); H01L 23/552 (2006.01); H01L 43/08 (2006.01); G01R 33/09 (2006.01)
CPC H01L 27/22 (2013.01) [G01R 33/09 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/552 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A magnetoresistive sensor module, comprising:
a semiconductor substrate;
an integrated semiconductor circuit;
a metal-insulator arrangement comprising a plurality of structured metal sheets and insulation layers, wherein the structured metal sheets are electrically connected to the integrated semiconductor circuit;
a first metal-filled via and a second metal-filled via through at least one insulation layer of the plurality of insulation layers, the first metal-filled via being electrically connected to a first portion of at least one structured metal sheet of the plurality of structured metal sheets, and the second metal-filled via being electrically connected to a second portion of the at least one structured metal sheet, wherein the first and second metal-filled vias have planar surfaces ending flush with a surface of the at least one insulation layer; and
a magnetoresistive sensor structure on the surface of the at least one insulation layer, the magnetoresistive sensor structure being electrically connected to the first and second portions of the at least one structured metal sheet, wherein the integrated semiconductor circuit is electrically connected to the first and second metal-filled vias.