US 9,812,492 B2
Metal shield structure and methods for BSI image sensors
Shiu-Ko JangJian, Tainan (TW); Chi-Cherng Jeng, Tainan (TW); Volume Chien, Tainan (TW); and Ying-Lang Wang, Tien-Chung Village (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Apr. 13, 2015, as Appl. No. 14/685,123.
Application 14/685,123 is a division of application No. 13/718,688, filed on Dec. 18, 2012, granted, now 9,024,369.
Prior Publication US 2015/0214272 A1, Jul. 30, 2015
Int. Cl. H01L 27/146 (2006.01); H01L 31/18 (2006.01)
CPC H01L 27/14687 (2013.01) [H01L 27/1462 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14623 (2013.01); H01L 27/14643 (2013.01); H01L 27/14685 (2013.01); H01L 31/18 (2013.01)] 16 Claims
OG exemplary drawing
 
8. A method comprising:
providing a substrate;
forming an image sensor adjacent to a first side of the substrate;
forming a metal silicide layer through a substrate surface pre-treatment process and a backside illumination layer on a second side of the substrate, wherein the backside illumination layer comprises a first dielectric layer formed of a plasma enhanced oxide, a second dielectric layer formed of a low deposited rate resistor protection oxide and a third dielectric layer formed of the plasma enhanced oxide;
forming a first via and a second via by patterning the backside illumination layer, wherein bottom surfaces of the first via and the second via are in contact with a top surface of the substrate;
forming a metal layer over the backside illumination layer; and
forming a metal shielding layer by patterning the metal layer, wherein the metal shielding layer is connected to the substrate through the first via and the second via.