a first pixel cell comprising:

a first photoelectric converter including a first electrode, a second electrode facing the first electrode, and a first photoelectric conversion layer between the first electrode and the second electrode;

a first field effect transistor having a first gate and a first channel region, the first gate being connected to the first electrode; and

a first node between the first photoelectric converter and the first field effect transistor, and

a second pixel cell comprising:

a second photoelectric converter including a third electrode, a fourth electrode facing the third electrode, and a second photoelectric conversion layer between the third electrode and the fourth electrode;

a second field effect transistor having a second gate and a second channel region, the second gate being connected to the third electrode, and

a second node between the first photoelectric converter and the second field effect transistor, wherein

the first field effect transistor outputs a first electric signal corresponding to change in dielectric constant between the first electrode and the second electrode, the change being caused by incident light on the first photoelectric conversion layer,

the second field effect transistor outputs a second electric signal corresponding to change in dielectric constant between the third electrode and the fourth electrode, the change being caused by incident light on the second photoelectric conversion layer, and

Cpd1, Cn1, Cpd2 and Cn2 satisfy a relation of Cpd1/Cn1<Cpd2/Cn2 where a value of capacitance of the first photoelectric converter in a state of receiving no incident light is represented as Cpd1, a value of capacitance between the first node and the first channel region is represented as Cn1, a value of capacitance of the second photoelectric converter in a state of receiving no incident light is represented as Cpd2, and a value of capacitance between the second node and the second channel region is represented as Cn2.