US 9,812,489 B2
Pixels with photodiodes formed from epitaxial silicon
Daniel Tekleab, Hayward, CA (US)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on Apr. 19, 2016, as Appl. No. 15/133,129.
Claims priority of provisional application 62/252,775, filed on Nov. 9, 2015.
Prior Publication US 2017/0133426 A1, May 11, 2017
Int. Cl. H01L 27/146 (2006.01); H04N 5/225 (2006.01); H01L 31/103 (2006.01); H01L 21/66 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01); H01L 31/18 (2006.01)
CPC H01L 27/14645 (2013.01) [H01L 21/28035 (2013.01); H01L 27/1463 (2013.01); H01L 27/14614 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14689 (2013.01); H01L 27/14698 (2013.01); H01L 29/4916 (2013.01); H01L 31/1804 (2013.01); H01L 31/1864 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method of forming a pixel comprising:
forming a trench in a substrate, wherein the substrate comprises a p-type doped substrate;
growing n-type doped epitaxial silicon in the trench;
after growing the n-type doped epitaxial silicon in the trench, growing p-type doped epitaxial silicon on the n-type doped epitaxial silicon;
forming an n-well region that overlaps the n-type doped epitaxial silicon, wherein forming the n-well region comprises implanting an n-type dopant in the p-type doped epitaxial silicon; and
forming first and second isolation regions, wherein the n-well region and the n-type doped epitaxial silicon are interposed between the first and second isolation regions.