| US 9,812,489 B2 | ||
| Pixels with photodiodes formed from epitaxial silicon | ||
| Daniel Tekleab, Hayward, CA (US) | ||
| Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US) | ||
| Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US) | ||
| Filed on Apr. 19, 2016, as Appl. No. 15/133,129. | ||
| Claims priority of provisional application 62/252,775, filed on Nov. 9, 2015. | ||
| Prior Publication US 2017/0133426 A1, May 11, 2017 | ||
| Int. Cl. H01L 27/146 (2006.01); H04N 5/225 (2006.01); H01L 31/103 (2006.01); H01L 21/66 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01); H01L 31/18 (2006.01) | ||
| CPC H01L 27/14645 (2013.01) [H01L 21/28035 (2013.01); H01L 27/1463 (2013.01); H01L 27/14614 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14689 (2013.01); H01L 27/14698 (2013.01); H01L 29/4916 (2013.01); H01L 31/1804 (2013.01); H01L 31/1864 (2013.01)] | 14 Claims |
| 1. A method of forming a pixel comprising:
forming a trench in a substrate, wherein the substrate comprises a p-type doped substrate;
growing n-type doped epitaxial silicon in the trench;
after growing the n-type doped epitaxial silicon in the trench, growing p-type doped epitaxial silicon on the n-type doped
epitaxial silicon;
forming an n-well region that overlaps the n-type doped epitaxial silicon, wherein forming the n-well region comprises implanting
an n-type dopant in the p-type doped epitaxial silicon; and
forming first and second isolation regions, wherein the n-well region and the n-type doped epitaxial silicon are interposed
between the first and second isolation regions.
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