US 9,812,487 B2
Structure and method for 3D image sensor
Min-Feng Kao, Chiayi (TW); Dun-Nian Yaung, Taipei (TW); Jen-Cheng Liu, Hsin-Chu (TW); Chun-Chieh Chuang, Tainan (TW); Feng-Chi Hung, Hsin-Chu County (TW); Shuang-Ji Tsai, Tainan (TW); Jeng-Shyan Lin, Tainan (TW); Shu-Ting Tsai, Kaohsiung (TW); and Wen-I Hsu, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Dec. 19, 2016, as Appl. No. 15/383,924.
Application 15/383,924 is a continuation of application No. 14/739,514, filed on Jun. 15, 2015, granted, now 9,525,003.
Application 14/739,514 is a continuation of application No. 14/143,848, filed on Dec. 30, 2013, granted, now 9,059,061, issued on Jun. 16, 2015.
Claims priority of provisional application 61/799,113, filed on Mar. 15, 2013.
Prior Publication US 2017/0098679 A1, Apr. 6, 2017
Int. Cl. H01L 27/14 (2006.01); H01L 27/146 (2006.01)
CPC H01L 27/14636 (2013.01) [H01L 27/1462 (2013.01); H01L 27/1469 (2013.01); H01L 27/14634 (2013.01); H01L 27/14685 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a first substrate having a first device;
a first interconnect structure disposed over the first substrate;
a second substrate having a second device, the second substrate disposed over the first substrate;
a second interconnect structure formed over the second substrate and interfacing with the first interconnect structure; and
a contact feature extending through the first substrate, the first interconnect structure, and the second interconnect structure to electrically couple the first device to the second device, wherein the contact feature has a first width in the first substrate and a second width in the second interconnect structure, wherein the first and second widths are different from each other, and
wherein the first substrate has a first side facing away from the first interconnect structure and a second side facing the first interconnect structure, wherein the contact feature extends from the first side to the second side of the first substrate.