US 9,812,485 B2
Solid state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
Ryoji Suzuki, Kanagawa (JP)
Assigned to Sony Corporation, Tokyo (JP)
Filed by SONY CORPORATION, Tokyo (JP)
Filed on Sep. 9, 2016, as Appl. No. 15/261,450.
Application 15/261,450 is a continuation of application No. 14/417,027, granted, now 9,496,303, previously published as PCT/JP2013/069509, filed on Jul. 18, 2013.
Claims priority of application No. 2012-168365 (JP), filed on Jul. 30, 2012.
Prior Publication US 2017/0062498 A1, Mar. 2, 2017
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/146 (2006.01); H04N 5/359 (2011.01); H04N 9/04 (2006.01)
CPC H01L 27/1463 (2013.01) [H01L 27/1464 (2013.01); H01L 27/14621 (2013.01); H01L 27/14625 (2013.01); H01L 27/14627 (2013.01); H04N 5/359 (2013.01); H04N 9/045 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An imaging device comprising:
a semiconductor substrate having a first side as a light-incident side and a second side opposite to the first side;
a plurality of pixels each including a photoelectric conversion unit formed in the semiconductor substrate;
a first insulating film disposed at the first side of the semiconductor substrate, wherein at least a portion of the first insulating film is disposed directly above the photoelectric conversion unit included in the semiconductor substrate; and
a device isolating portion formed to divide the plurality of pixels, the device isolating portion including:
a fixed charge film disposed at the first side of the semiconductor substrate, wherein at least a portion of the fixed charge film extends from the first side of the semiconductor substrate towards the second side of the semiconductor substrate, and
a second insulating film,
wherein,
at least a portion of the device isolating portion adjoins a p-type region in the semiconductor substrate.