US 9,812,483 B2
Back-side illuminated (BSI) image sensor with global shutter scheme
Chun-Yuan Chen, Tainan (TW); Ching-Chun Wang, Tainan (TW); Dun-Nian Yaung, Taipei (TW); Shyh-Fann Ting, Tainan (TW); Wei Chuang Wu, Tainan (TW); Yen-Ting Chiang, Tainan (TW); and Kuan-Tsun Chen, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on May 9, 2016, as Appl. No. 15/149,497.
Claims priority of provisional application 62/246,346, filed on Oct. 26, 2015.
Prior Publication US 2017/0117315 A1, Apr. 27, 2017
Int. Cl. H01L 27/148 (2006.01); H01L 27/146 (2006.01)
CPC H01L 27/14629 (2013.01) [H01L 27/1464 (2013.01); H01L 27/14636 (2013.01); H01L 27/14645 (2013.01); H01L 27/14685 (2013.01); H01L 27/14689 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A back-side illuminated (BSI) image sensor, comprising:
an image sensing element arranged within a semiconductor substrate;
a pixel-level memory node arranged within the semiconductor substrate at a location laterally offset from the image sensing element; and
a reflective material arranged within the semiconductor substrate at a location between the pixel-level memory node and a plane extending along a back-side of the semiconductor substrate and having an aperture that overlies the image sensing element.