US 9,812,481 B2
Solid-state imaging device and manufacturing method of the same, and electronic apparatus
Yuki Miyanami, Kanagawa (JP)
Assigned to Sony Corporation, Tokyo (JP)
Filed by SONY CORPORATION, Tokyo (JP)
Filed on Sep. 6, 2016, as Appl. No. 15/257,665.
Application 15/257,665 is a continuation of application No. 15/085,305, filed on Mar. 30, 2016, granted, now 9,461,085.
Application 15/085,305 is a continuation of application No. 14/864,163, filed on Sep. 24, 2015, granted, now 9,368,532, issued on Jun. 14, 2016.
Application 14/864,163 is a continuation of application No. 14/720,410, filed on May 22, 2015, granted, now 9,184,201, issued on Nov. 10, 2015.
Application 14/720,410 is a continuation of application No. 14/372,413, granted, now 9,105,539, issued on Jul. 15, 2014, previously published as PCT/JP2013/050406, filed on Jan. 11, 2013.
Claims priority of application No. 2012-011125 (JP), filed on Jan. 23, 2012.
Prior Publication US 2016/0372508 A1, Dec. 22, 2016
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/146 (2006.01); H04N 5/357 (2011.01); H04N 5/376 (2011.01); H04N 5/378 (2011.01); H04N 5/225 (2006.01); H04N 9/04 (2006.01)
CPC H01L 27/14623 (2013.01) [H01L 27/1462 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14638 (2013.01); H01L 27/14641 (2013.01); H01L 27/14643 (2013.01); H01L 27/14645 (2013.01); H01L 27/14685 (2013.01); H01L 27/14689 (2013.01); H04N 5/2253 (2013.01); H04N 5/3575 (2013.01); H04N 5/376 (2013.01); H04N 5/378 (2013.01); H04N 9/04 (2013.01)] 21 Claims
OG exemplary drawing
 
1. An imaging device, comprising:
a semiconductor substrate including:
first and second photoelectric conversion units, and
a trench disposed between the first photoelectric conversion unit and the second photoelectric conversion unit;
an insulating film disposed at a light-receiving side of the semiconductor substrate; and
a light-shielding portion,
wherein,
the first photoelectric conversion unit is adjacent to the second photoelectric conversion unit,
a light-incident side of the insulating film includes a concave portion at a location corresponding to the trench, and
the light-shielding portion is disposed above the concave portion of the insulating film.