US 9,812,475 B2
Detector arrangement and corresponding operating method wherein the detector is a semi-conductor detector which is switchable between collection states with selected subpixel sensitivity
Alexander Baehr, Groebenzell (DE); Rainer Richter, Munich (DE); Florian Schopper, Munich (DE); and Johannes Treis, Munich (DE)
Assigned to Max-Planck-Gesellschaft zur Foerderung der Wissenschaften e.V., Munich (DE)
Filed by Max-Planck-Gesellschaft zur Foerderung der Wissenschaften e.V., Munich (DE)
Filed on May 7, 2015, as Appl. No. 14/706,117.
Claims priority of application No. 10 2014 006 648 (DE), filed on May 7, 2014.
Prior Publication US 2015/0325608 A1, Nov. 12, 2015
Int. Cl. H01L 27/146 (2006.01); H04N 5/341 (2011.01)
CPC H01L 27/14609 (2013.01) [H01L 27/14641 (2013.01); H01L 27/14679 (2013.01); H04N 5/341 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A detector arrangement for detection of radiation, comprising:
a) a semi-conductor detector with several pixels for detection of the radiation,
wherein
b) each of the pixels each has a first subpixel and a second subpixel,
c) the semi-conductor detector is switchable between
c1) a first collection state in which the first subpixel is sensitive and the second subpixel is insensitive, so that radiation-generated signal charge carriers are collected substantially only in the first subpixel, and
c2) a second collection state in which the second subpixel is sensitive and the first subpixel is insensitive, so that the radiation-generated signal charge carriers are collected substantially only in the second subpixel,
d) the first subpixel has a first DEPFET with an internal gate for collection of radiation-generated signal charge carriers,
e) the second subpixel has a second DEPFET with an internal gate for collection of radiation-generated signal charge carriers,
f) in the first collection state, the radiation-generated signal charge carries substantially only reach the internal gate of the first DEPFET, while the internal gate of the second DEPFET is shielded, so that substantially none of the radiation-generated signal charge carriers reaches the internal gate of the second DEPFET, and
g) in the second collection state, the radiation-generated signal charge carriers essentially only reach the internal gate of the second DEPFET, while the internal gate of the first DEPFET is shielded, so that essentially none of the radiation-generated signal charge carriers reaches the internal gate of the first DEPFET.