US 9,812,469 B2 | ||
Array substrate having a plurality of gate electrode material lines, source-drain electrode material lines and first metal lines | ||
Zhanfeng Cao, Beijing (CN); Feng Zhang, Beijing (CN); Bin Zhang, Beijing (CN); Xiaolong He, Beijing (CN); Jincheng Gao, Beijing (CN); Qi Yao, Beijing (CN); Zhengliang Li, Beijing (CN); and Xiangchun Kong, Beijing (CN) | ||
Assigned to BOE Technology Group Co., Ltd., Beijing (CN) | ||
Filed by BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN) | ||
Filed on May 10, 2016, as Appl. No. 15/150,549. | ||
Claims priority of application No. 2015 1 0379820 (CN), filed on Jul. 1, 2015. | ||
Prior Publication US 2017/0005110 A1, Jan. 5, 2017 | ||
Int. Cl. H01L 27/12 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01) |
CPC H01L 27/124 (2013.01) [H01L 29/41733 (2013.01); H01L 29/42384 (2013.01)] | 20 Claims |
1. An array substrate comprising a peripheral area in which a plurality of gate electrode material lines, a plurality of source-drain
electrode material lines and a plurality of first metal lines are disposed,
wherein, overlapping areas are provided between or among the gate electrode material lines, the source-drain material lines
and the first metal lines; a number of the overlapping areas of the source-drain material lines and the first metal lines
is less than a number of the overlapping areas of the source-drain material lines and the gate electrode material lines; the
gate electrode material lines, the source-drain material lines and the first metal lines are configured as connecting lines
of circuits in the peripheral area.
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