US 9,812,467 B2
Semiconductor device comprising an oxide semiconductor
Shunpei Yamazaki, Setagaya (JP); Hideomi Suzawa, Atsugi (JP); Shinya Sasagawa, Chigasaki (JP); and Tetsuhiro Tanaka, Isehara (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken (JP)
Filed on Feb. 11, 2016, as Appl. No. 15/41,338.
Application 15/041,338 is a continuation of application No. 14/054,130, filed on Oct. 15, 2013, granted, now 9,263,259.
Claims priority of application No. 2012-230362 (JP), filed on Oct. 17, 2012; and application No. 2012-239516 (JP), filed on Oct. 30, 2012.
Prior Publication US 2016/0163744 A1, Jun. 9, 2016
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/26 (2006.01); H01L 29/78 (2006.01)
CPC H01L 27/1225 (2013.01) [H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02609 (2013.01); H01L 21/02617 (2013.01); H01L 21/02631 (2013.01); H01L 29/045 (2013.01); H01L 29/26 (2013.01); H01L 29/78 (2013.01); H01L 29/7869 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an oxide insulating film;
an oxide semiconductor layer over the oxide insulating film;
a source electrode layer and a drain electrode layer over the oxide semiconductor layer,
a gate insulating film over the oxide semiconductor layer, the source electrode layer and the drain electrode layer;
a first gate electrode layer over the gate insulating film, the first gate electrode layer overlapping with the oxide semiconductor layer; and
a second gate electrode layer over and in contact with the first gate electrode layer,
wherein distance between the source electrode layer and the drain electrode layer is shorter than or equal to 30 nm,
wherein the first gate electrode layer comprises a conductive nitride, and
wherein the second gate electrode layer comprises tungsten.