US 9,812,465 B2
Display device including transistor and manufacturing method thereof
Junichiro Sakata, Atsugi (JP); Toshinari Sasaki, Atsugi (JP); and Miyuki Hosoba, Isehara (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken (JP)
Filed on Jul. 21, 2015, as Appl. No. 14/804,508.
Application 14/804,508 is a continuation of application No. 14/228,663, filed on Mar. 28, 2014, granted, now 9,130,046.
Application 14/228,663 is a continuation of application No. 13/632,709, filed on Oct. 1, 2012, granted, now 8,735,884, issued on May 27, 2014.
Application 13/632,709 is a continuation of application No. 12/828,464, filed on Jul. 1, 2010, granted, now 8,304,300, issued on Nov. 6, 2012.
Claims priority of application No. 2009-159052 (JP), filed on Jul. 3, 2009.
Prior Publication US 2015/0325600 A1, Nov. 12, 2015
Int. Cl. H01L 29/10 (2006.01); H01L 29/12 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 27/1225 (2013.01) [H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 27/1218 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78648 (2013.01); H01L 29/78654 (2013.01); H01L 29/78696 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first conductive layer;
a first insulating layer over the first conductive layer;
an oxide semiconductor layer over the first insulating layer;
a second insulating layer over the oxide semiconductor layer;
a second conductive layer and a third conductive layer over the second insulating layer;
a third insulating layer over the second conductive layer and the third conductive layer;
a fourth conductive layer over the third insulating layer;
a fourth insulating layer over the fourth conductive layer; and
a pixel electrode electrically connected to the second conductive layer,
wherein each of the fourth conductive layer and the pixel electrode comprises a light-transmitting conductive material,
wherein the fourth conductive layer extends beyond both side edges of the oxide semiconductor layer in a channel width direction, and
wherein the fourth conductive layer overlaps a light-blocking layer.