| US 9,812,464 B1 | ||
| Three-dimensional semiconductor device | ||
| Sung-Min Hwang, Seoul (KR) | ||
| Assigned to SAMSUNG ELECTRONICS CO., LTD., (KR) | ||
| Filed by Sung-Min Hwang, Seoul (KR) | ||
| Filed on Feb. 20, 2017, as Appl. No. 15/437,426. | ||
| Claims priority of application No. 10-2016-0060331 (KR), filed on May 17, 2016. | ||
| Int. Cl. H01L 23/52 (2006.01); H01L 27/11582 (2017.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/535 (2006.01) | ||
| CPC H01L 27/11582 (2013.01) [H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/535 (2013.01)] | 20 Claims |
| 1. A three-dimensional semiconductor device, comprising:
a lower electrode structure including a plurality of lower electrodes that are vertically stacked on a substrate; and
an upper electrode structure including a plurality of upper electrodes that are stacked on the lower electrode structure,
wherein each of the lower and upper electrodes comprises an electrode portion that is substantially parallel to a top surface
of the substrate and a vertical pad portion that is inclined with respect to the top surface of the substrate,
the vertical pad portions of adjacent lower electrodes are spaced apart from each other by a first horizontal distance, and
the vertical pad portions of adjacent lower and upper electrodes are spaced apart from each other by a second horizontal distance
that is greater than the first horizontal distance.
|