| US 9,812,456 B2 | ||
| Dual-port semiconductor memory and first in first out (FIFO) memory having electrically floating body transistor | ||
| Yuniarto Widjaja, San Jose, CA (US) | ||
| Assigned to Zeno Semiconductor, Inc., Sunnyvale, CA (US) | ||
| Filed by Zeno Semiconductor, Inc., Sunnyvale, CA (US) | ||
| Filed on Jan. 24, 2017, as Appl. No. 15/414,009. | ||
| Application 15/414,009 is a division of application No. 14/563,133, filed on Dec. 8, 2014, granted, now 9,589,963. | ||
| Application 14/563,133 is a continuation of application No. 14/282,850, filed on May 20, 2014, granted, now 8,934,296. | ||
| Application 14/282,850 is a continuation of application No. 14/046,986, filed on Oct. 6, 2013, granted, now 8,767,458. | ||
| Application 14/046,986 is a continuation of application No. 13/296,402, filed on Nov. 15, 2011, granted, now 8,582,359. | ||
| Claims priority of provisional application 61/413,992, filed on Nov. 16, 2010. | ||
| Prior Publication US 2017/0133382 A1, May 11, 2017 | ||
| Int. Cl. G11C 11/34 (2006.01); H01L 27/108 (2006.01); H01Q 1/22 (2006.01); G11C 7/00 (2006.01); H01L 27/102 (2006.01) | ||
| CPC H01L 27/10802 (2013.01) [G11C 7/00 (2013.01); H01L 27/1023 (2013.01); H01Q 1/2283 (2013.01)] | 20 Claims |
| 1. A multi-port semiconductor memory cell comprising:
a plurality of gates;
a common body region insulated from said plurality of gates and of a first conductivity type configured to store a charge
that is indicative of a memory state of said multi-port semiconductor memory cell; and
a plurality of conductive regions of a second conductivity type,
wherein adjacent ones of each of said plurality of gates are separated by a respective one of the plurality of conductive
regions, and wherein the common body region extends continuously beneath at least one of the plurality of conductive regions;
wherein one of said plurality of conductive regions of a second conductivity type is electrically connected to a back bias
terminal; and
wherein applying a voltage to said back bias terminal results in at least two stable common body region charge levels.
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