US 9,812,452 B2
Method to form silicide and contact at embedded epitaxial facet
Kwan-Yong Lim, Plano, TX (US); James Walter Blatchford, Richardson, TX (US); Shashank S. Ekbote, Allen, TX (US); and Younsung Choi, Allen, TX (US)
Assigned to TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed by Texas Instruments Incorporated, Dallas, TX (US)
Filed on Oct. 27, 2016, as Appl. No. 15/336,248.
Application 15/336,248 is a continuation of application No. 14/563,062, filed on Dec. 8, 2014, granted, now 9,508,601.
Claims priority of provisional application 61/914,995, filed on Dec. 12, 2013.
Prior Publication US 2017/0047329 A1, Feb. 16, 2017
Int. Cl. H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/417 (2006.01); H01L 21/8234 (2006.01); H01L 23/535 (2006.01)
CPC H01L 27/092 (2013.01) [H01L 21/823481 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823878 (2013.01); H01L 23/535 (2013.01); H01L 29/4175 (2013.01)] 17 Claims
OG exemplary drawing
 
17. An integrated circuit, comprising:
a substrate comprising semiconductor material extending to a top surface of the substrate;
field oxide disposed in the substrate;
a p-type metal oxide semiconductor (PMOS) transistor, comprising:
a gate dielectric layer at the top surface of the semiconductor material;
a gate over the gate dielectric layer of the PMOS transistor;
a first silicon germanium (SiGe) source/drain region in the substrate between the gate of the PMOS transistor and the field oxide, abutting the field oxide, having an angled facet facing the field oxide such that the first SiGe source/drain region is laterally separated from the field oxide at a top surface of the field oxide by a gap which extends at least 20 nanometers down from the top surface of the field oxide;
a second SiGe source/drain region in the substrate adjacent to the gate of the PMOS transistor, opposite from the first SiGe source/drain region; and
source/drain spacers laterally adjacent to the gate of the PMOS transistor;
a gap filler of silicon dioxide-based dielectric material in the gap, abutting the field oxide and extending down to and contacting the first SiGe source/drain region at a bottom of the gap;
metal silicide on a portion of the angled facet of the first SiGe source/drain region; and
a contact on the metal silicide on the angled facet of the first SiGe source/drain region.