US 9,812,451 B2
Field effect transistor contact with reduced contact resistance
Su-Hao Liu, Chiayi County (TW); Yan-Ming Tsai, Miaoli County (TW); Chung-Ting Wei, Hsin-Chu (TW); Ziwei Fang, Hsinchu (TW); Chih-Wei Chang, Hsin-Chu (TW); Chien-Hao Chen, Ilan County (TW); and Huicheng Chang, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD, Hsin Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Feb. 3, 2016, as Appl. No. 15/14,318.
Prior Publication US 2017/0221894 A1, Aug. 3, 2017
Int. Cl. H01L 21/335 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 29/45 (2006.01); H01L 29/16 (2006.01); H01L 29/165 (2006.01); H01L 29/167 (2006.01); H01L 29/78 (2006.01)
CPC H01L 27/092 (2013.01) [H01L 21/26513 (2013.01); H01L 21/324 (2013.01); H01L 21/823814 (2013.01); H01L 21/823828 (2013.01); H01L 29/16 (2013.01); H01L 29/165 (2013.01); H01L 29/167 (2013.01); H01L 29/1608 (2013.01); H01L 29/456 (2013.01); H01L 29/7848 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
providing a semiconductor substrate having a first region and a second region;
forming a first gate within the first region and a second gate within the second region on the semiconductor substrate;
forming first source/drain features of a first semiconductor material with an n-type dopant in the semiconductor substrate within the first region, wherein the first source/drain features are interposed by the first gate;
forming second source/drain features of a second semiconductor material with a p-type dopant in the semiconductor substrate within the second region, wherein the second source/drain features are interposed by the second gate and the second semiconductor material is different from the first semiconductor material in composition;
forming first silicide features to the first source/drain features and second silicide features to the second source/drain features; and
performing an ion implantation process of a species to both the first and second regions, thereby introducing the species to first source/drain features and the second source/drain features.