US 9,812,444 B2
Fin-type resistor
Chia-Hsin Hu, Changhua (TW); Hsueh-Shih Fan, Hsinchu (TW); and Huan-Tsung Huang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on May 11, 2017, as Appl. No. 15/592,256.
Application 15/592,256 is a division of application No. 15/068,068, filed on Mar. 11, 2016, granted, now 9,691,758.
Prior Publication US 2017/0263602 A1, Sep. 14, 2017
Int. Cl. H01L 29/66 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01); H01L 29/78 (2006.01); H01L 23/535 (2006.01); H01L 21/768 (2006.01); H01L 29/161 (2006.01)
CPC H01L 27/0629 (2013.01) [H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H01L 28/20 (2013.01); H01L 29/161 (2013.01); H01L 29/66166 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
17. A device, comprising:
a fin extending away from a substrate, the fin comprising a semiconducting material;
a plurality of epitaxially grown regions disposed along a top surface of the fin, wherein the plurality of epitaxially grown regions are arranged to alternate with regions having no epitaxial material grown on the top surface of the fin; and
at least two contacts configured to physically contact epitaxially grown regions from the plurality of epitaxially grown regions.