US 9,812,439 B2
Bi-directional ESD protection circuit
Timothy Patrick Pauletti, Plano, TX (US); Sameer Pendharkar, Dallas, TX (US); Wayne Tien-Feng Chen, Plano, TX (US); Jonathan Brodsky, Richardson, TX (US); and Robert Steinhoff, Dallas, TX (US)
Assigned to Texas Instruments Incorporated, Dallas, TX (US)
Filed by Texas Instruments Incorporated, Dallas, TX (US)
Filed on Oct. 14, 2014, as Appl. No. 14/514,066.
Application 14/514,066 is a division of application No. 10/926,916, filed on Aug. 26, 2004, granted, now 8,890,248.
Prior Publication US 2015/0103451 A1, Apr. 16, 2015
Int. Cl. H02H 9/04 (2006.01); H01L 27/02 (2006.01); H01L 29/74 (2006.01); H01L 29/87 (2006.01); H01L 29/749 (2006.01)
CPC H01L 27/0262 (2013.01) [H01L 29/7436 (2013.01); H01L 29/87 (2013.01); H01L 29/749 (2013.01); H01L 2924/0002 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An electrostatic discharge (ESD) device for protecting an input/output terminal of a circuit, the device comprising:
a first transistor with an integral silicon-controlled rectifier (SCR) coupled between the input/output (I/O) terminal of the circuit and a node;
a second transistor with an integral silicon-controlled rectifier coupled between the node and a negative terminal of a supply voltage, wherein the silicon-controlled rectifier of the first transistor triggers in response to a negative ESD voltage and the silicon-controlled rectifier of the second transistor triggers in response to a positive ESD voltage;
wherein the first transistor and the second transistor are configured as diode coupled transistors; and
a communication driver device is coupled between the node and the negative terminal of the supply voltage.