US 9,812,438 B2
Avalanche diode having an enhanced defect concentration level and method of making the same
Jens Schneider, Munich (DE); Kai Esmark, Neuried (DE); and Martin Wendel, Hohenbrunn (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Dec. 22, 2015, as Appl. No. 14/978,882.
Application 14/978,882 is a division of application No. 14/304,701, filed on Jun. 13, 2014, granted, now 9,257,523.
Application 14/304,701 is a division of application No. 12/017,263, filed on Jan. 21, 2008, granted, now 8,791,547, issued on Jul. 29, 2014.
Prior Publication US 2016/0111413 A1, Apr. 21, 2016
Int. Cl. H01L 21/20 (2006.01); H01L 27/02 (2006.01); H01L 29/32 (2006.01); H01L 29/861 (2006.01); H01L 29/866 (2006.01); H01L 29/66 (2006.01); H01L 29/73 (2006.01); H01L 21/265 (2006.01); H01L 21/322 (2006.01); H01L 29/06 (2006.01); H01L 23/62 (2006.01)
CPC H01L 27/0255 (2013.01) [H01L 21/26506 (2013.01); H01L 21/3221 (2013.01); H01L 27/0259 (2013.01); H01L 29/0603 (2013.01); H01L 29/32 (2013.01); H01L 29/66113 (2013.01); H01L 29/7302 (2013.01); H01L 29/861 (2013.01); H01L 29/866 (2013.01); H01L 23/62 (2013.01); H01L 2924/0002 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A method of forming an avalanche diode, the method comprising:
forming a first diode region next to a second diode region in a substrate, the second diode region oppositely doped from the first diode region;
forming an avalanche ignition region surrounding a junction of the first diode region and the second diode region, the avalanche ignition region comprising crystal defects and comprising a first major surface and an opposite second major surface; and
forming a depletion zone surrounding the junction of the first diode region with the second diode region, wherein the depletion zone is wider than the avalanche ignition region, wherein the depletion zone encloses the first major surface and the second major surface from both sides of the avalanche ignition region comprising the crystal defects.