US 9,812,437 B2
Semiconductor integrated circuit device, and electronic appliance using the same
Hideyuki Kakubari, Shiojiri (JP)
Assigned to SEIKO EPSON CORPORATION, Tokyo (JP)
Filed by SEIKO EPSON CORPORATION, Tokyo (JP)
Filed on Feb. 25, 2015, as Appl. No. 14/631,079.
Claims priority of application No. 2014-035050 (JP), filed on Feb. 26, 2014; and application No. 2015-033787 (JP), filed on Feb. 24, 2015.
Prior Publication US 2015/0243646 A1, Aug. 27, 2015
Int. Cl. H02H 9/04 (2006.01); H01L 27/02 (2006.01); H01L 29/74 (2006.01); H01L 27/092 (2006.01)
CPC H01L 27/0255 (2013.01) [H01L 27/0292 (2013.01); H01L 29/7412 (2013.01); H01L 27/092 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A semiconductor integrated circuit device comprising:
a first power supply terminal to which a first power supply potential is supplied;
a second power supply terminal to which a second power supply potential that is lower than the first power supply potential is supplied;
a signal terminal that at least outputs a signal;
an output buffer circuit including a P channel transistor connected between the first power supply terminal and the signal terminal, and an N channel transistor connected between the signal terminal and the second power supply terminal;
a potential control circuit that supplies the potential of the first power supply terminal or a potential of the signal terminal to a back gate of the P channel transistor according to the potential of the signal terminal;
a first protection diode including an anode connected to the signal terminal;
a common discharge line connected to a cathode of the first protection diode;
an electrostatic discharge protection circuit connected between the common discharge line and the second power supply terminal; and
a second protection diode including an anode connected to the second power supply terminal, and a cathode connected to the signal terminal.