US 9,812,421 B2
Bonding wire for semiconductor devices
Tomohiro Uno, Tokyo (JP); Yoshiaki Hagiwara, Tokyo (JP); Tetsuya Oyamada, Tokyo (JP); and Daizo Oda, Saitama (JP)
Assigned to NIPPON STEEL & SUMIKIN MATERIALS CO., LTD., Tokyo (JP); and NIPPON MICROMETAL CORPORATION, Saitama (JP)
Appl. No. 15/105,707
Filed by NIPPON STEEL & SUMIKIN MATERIALS CO., LTD., Tokyo (JP); and NIPPON MICROMETAL CORPORATION, Saitama (JP)
PCT Filed Dec. 4, 2014, PCT No. PCT/JP2014/082164
§ 371(c)(1), (2) Date Jun. 17, 2016,
PCT Pub. No. WO2015/093306, PCT Pub. Date Jun. 25, 2015.
Claims priority of application No. 2013-260563 (JP), filed on Dec. 17, 2013.
Prior Publication US 2016/0315063 A1, Oct. 27, 2016
Int. Cl. H01L 23/48 (2006.01); H01L 23/00 (2006.01); C22C 5/06 (2006.01); C22C 5/08 (2006.01); C22C 9/06 (2006.01); B23K 35/30 (2006.01); B23K 35/32 (2006.01)
CPC H01L 24/45 (2013.01) [B23K 35/302 (2013.01); B23K 35/3006 (2013.01); B23K 35/3033 (2013.01); B23K 35/322 (2013.01); C22C 5/06 (2013.01); C22C 5/08 (2013.01); C22C 9/06 (2013.01); H01L 24/43 (2013.01); H01L 24/48 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/43 (2013.01); H01L 2224/4321 (2013.01); H01L 2224/43848 (2013.01); H01L 2224/45005 (2013.01); H01L 2224/45015 (2013.01); H01L 2224/45032 (2013.01); H01L 2224/45101 (2013.01); H01L 2224/45139 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/45155 (2013.01); H01L 2224/45163 (2013.01); H01L 2224/45164 (2013.01); H01L 2224/45166 (2013.01); H01L 2224/45541 (2013.01); H01L 2224/45572 (2013.01); H01L 2224/45644 (2013.01); H01L 2224/45655 (2013.01); H01L 2224/45664 (2013.01); H01L 2224/4809 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/85444 (2013.01); H01L 2924/00011 (2013.01); H01L 2924/013 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01015 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/206 (2013.01); H01L 2924/386 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A bonding wire for a semiconductor device comprising:
a core material containing more than 50 mol % of a metal M;
an intermediate layer formed over a surface of the core material and made of nickel (Ni), palladium (Pd), the metal M, and unavoidable impurities, concentration of the Ni being 15 to 80 mol %; and
a coating layer formed over the intermediate layer and made of Ni, Pd and unavoidable impurities, concentration of the Pd being 50 to 100 mol %,
wherein the metal M is copper (Cu) or silver (Ag), and the concentration of the Ni in the coating layer is lower than concentration of the Ni in the intermediate layer.